junction transistor

1. A bipolar junction transistor relates to the technical field of a semiconductor power device.
   双极结型晶体管，涉及半导体功率器件技术领域。
2. The concepts described above are embodied in the junction transistor.
   上述各种概念都反映在结型晶体管中。
3. The characteristic of power switch of bipolar junction transistor ( BJT) and the wireless receiving and sending technique are used to carry out the property of low cost and convenient to carry.
   运用了晶体三极管的开关特性和无线收发技术，实现了低功耗和便携的要求，同时运用软件方法实现了信号的快速提取。
4. Study of High Frequency 4H-SiC Bipolar Junction Transistor
   高频4H-SiC双极晶体管的研制
5. If the tunnel junction capacitance becomes larger, the amplitude of the I-V curve of single-electron transistor becomes smaller, but the period is unchanged.
   同时，单电子三极管I-V曲线的振幅随着隧道结电容的增大而减小，但I-V曲线的周期保持不变。
6. Teaching Practice on Equivalent Circuit of Bipolar Junction Transistor
   双极性晶体管等效电路的教学实践
7. The model of bipolar junction transistor ( BJT) and CMOS transistor and the basic circuit units such as current mirrors are briefly introduced;
   首先介绍了模拟集成电路在当代社会中的重要性和集成电路研究的必要性，并简要地介绍了双极型晶体管和CMOS晶体管的模型结构以及几种电流镜电路的原理及性能；
8. The model of field induced junction on minority carrier MIS tunnel junction emitter transistor
   少子MIS隧道结发射极晶体管场感应结模型
9. Damage of bipolar junction transistor under electromagnetic pulse injected from different electrode
   双极型晶体管损坏与强电磁脉冲注入位置的关系
10. Bipolar junction transistor ( BJT) has the self-heating phenomena, which seriously affects the properties of transistor.
    对于双极性晶体管，由于自身存在的自加热现象，严重地影响着器件的特性。
11. Current Voltage Characteristics of Double Injection Junction Field Effect Transistor
    双注入结型场效应管的电流-电压特性
12. Transient response of bipolar junction transistor under intense electromagnetic pulse
    双极型晶体管在强电磁脉冲作用下的瞬态响应
13. Natural equivalent circuit and hybrid parameters of junction transistor
    晶体管杂系参数与自然等效线路
14. How to Identify the Biased Collector Junction with the Transistor Saturated EFFECTS OF THE BASE-TO-COLLECTOR JUNCTION CAPACITANCE OF A TRANSISTOR ON AMPLIFYING CIRCUITS
    晶体管集电结电容对放大电路的影响
15. Analyzing the various problems of current ste ady-state operation life test standard, it is pointed out that, not measuring a n d controlling, transistor junction temperature in current transistor steady-state operation life test can lead to fatal inaccuracy of the test results.
    在分析了现行标准中晶体管稳态工作寿命试验方法存在问题的基础上，认为在现行的稳态工作寿命试验中没有对晶体管的结温实施测量和控制，是导致试验结果不准确的重要原因。
16. Effects of high power electromagnetic pulse injected from base on bipolar junction transistor A Bipolar Energy Gap Reference Voltage with Low Voltage and Temperature Draft
    基极注入强电磁脉冲对双极型晶体管的作用一种双极型低压低温漂能隙基准源
17. Improvement for the Phaseshift Trigger Circuit with Single Junction Transistor
    对单结晶体管移相触发电路的改进
18. It is very useful to judge whether operating mode of a transistor is normal or damaged by testing the emitter junction voltage of the transistor.
    测试三极管发射结压降对判断管子工作状态是否正常及管子是否损坏是很有用的。
19. A method for measuring and controlling the junction temperature of power transistor during succession operation life test is proposed.
    为了在试验周期中了解晶体管的结温，提出一种在功率晶体管稳态工作寿命试验过程中结温的测量与控制方法。
20. Test and Data Processing of Emitter Junction Barrier Capacitance C Te of Transistor
    晶体管发射极势垒电容C（Te）的测试及数据处理
21. With the help of the PN junction theory and the transistor principle, the author analyzes the principle of operation of the simulated multiplier working in the state of stronger signal, and concludes its related formula in this state?
    本文利用PN结理论及晶体管原理来分析工作在较大信号下模拟相乘器的工作原理，推导出它工作于输入较大信号状态下的输出关系式。
22. The goal of the design is to ensure the RF characteristics of the solid-state transmitter, to make the junction temperature of power transistor be lowest and to provide better performance-cost ratio.
    其设计目标是在保证发射机射频性能的同时使功率晶体管结温最低，并具有可能的最好性能价格比。
23. Investigation on NiFe/ Ag/ NiFe Nanometer Junction Spin Transistor
    NiFe/Ag/NiFe纳米结自旋晶体管研究
24. Measurement and Controlling of Junction Temperature of Power Bipolar Transistor During Succession Operation Life Test
    稳态工作条件下功率晶体管结温的测量与控制
25. Analysis of Capacitance Coupled Three Junction Single Electron Transistor Characteristics
    电容耦合三结单电子晶体管特性分析
26. The effect and mechanism of the bipolar junction transistor in different temperature
    双极晶体管不同温度的退火效应与机理
27. The compound transistor, consisting of a junction field-effect transisto and a bipolar transistor, has proved to possess a complementary characteristic, which is herein analysed and illustrated.
    用场效应管和双极型晶体管组成的复合管具有互补的特性.本文分析比复合管的特性，并举例说明其应用。
28. Secondly, we propose a single-electron tunneling junction SPICE model, carried on the analysis and the explanation of it. Thirdly, we utilize the orthodox theory to carry on the characteristic analysis of the single-electron transistor.
    然后提出了单电子结的SPICE模型，对其进行了分析和解释，紧接着运用正统理论对单电子晶体管进行了特性分析。
29. The current gain is one of the most important parameters of bipolar junction transistors ( BJTs). The degradation of the current gain for transistor is significant and typical radiation damage effect.
    电流增益是双极型晶体管的电性能参数中关键的参数，其衰减是双极型晶体管最显著同时也是最典型的辐射损伤效应。
30. When the signal is High-frequency, the effects of junction capacitance must be considered, and the circuit equations are listed to solve the problem. At this time, the transistor can also be treated as a linear device.
    高频时，必须考虑结电容的影响，列出电路方程进行求解，这时三极管还可以看成是一个线性器件。

noun

1. a semiconductor device capable of amplification

   Synonym:    transistorelectronic transistor